BFR93A,215

NPN RF Transistor, 6GHz, 12V, 35mA, TO-236, SMT

NPN RF transistor for wideband applications, operating up to 6 GHz. Features a TO-236AB surface mount package with tin plating. Offers a maximum collector current of 35mA and a power dissipation of 300mW. Collector-emitter voltage is rated at 12V, with a minimum gain of 13dB and hFE of 90. Suitable for a wide temperature range from -65°C to 175°C, this RoHS compliant component is supplied on tape and reel.

Frequency6GHz

PackageTO-236AB

MountingSurface Mount

PolarityNPN

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Technical Specifications

NXP BFR93A,215 technical specifications.

General

Package/Case	TO-236AB
Collector Base Voltage (VCBO)	15V
Collector Emitter Breakdown Voltage	12V
Collector Emitter Voltage (VCEO)	12V
Collector-emitter Voltage-Max	12V
Contact Plating	Tin
Continuous Collector Current	35mA
Emitter Base Voltage (VEBO)	2V
Frequency	6GHz
Gain	13dB
hFE Min	90
Lead Free	Lead Free
Max Breakdown Voltage	12V
Max Collector Current	35mA
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Max Power Dissipation	300mW
Mount	Surface Mount
Number of Elements	1
Operating Frequency	6 GHz
Output Power	300mW
Package Quantity	1
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	300mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	6GHz
Weight	0.00709oz