
NPN RF transistor with a 6 GHz gain bandwidth product and transition frequency, designed for wideband applications. Features a TO-236-3 surface mount package, 12V collector-emitter breakdown voltage, and 35mA continuous collector current. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 300mW. This RoHS compliant component is supplied on tape and reel.
NXP BFR93AR,215 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 35mA |
| Emitter Base Voltage (VEBO) | 2V |
| Gain Bandwidth Product | 6GHz |
| Height | 1mm |
| hFE Min | 40 |
| Length | 3mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 35mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Operating Frequency | 6000 MHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 6GHz |
| Weight | 0.00709oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFR93AR,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
