BFR94A,215

NPN BJT Transistor, 5GHz, 15V, 25mA, TO-236AB, SM

Single NPN bipolar junction transistor (BJT) designed for RF applications, operating at frequencies up to 5GHz with a gain bandwidth product of 5GHz. Features a maximum collector-emitter voltage of 15V and a continuous collector current of 25mA. Packaged in a TO-236AB surface mount case with tin plating, this lead-free and RoHS compliant component offers a maximum power dissipation of 300mW and operates within a temperature range of -65°C to 150°C.

Frequency5GHz

PackageTO-236AB

MountingSurface Mount

PolarityNPN

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Technical Specifications

NXP BFR94A,215 technical specifications.

General

Package/Case	TO-236AB
Collector Base Voltage (VCBO)	20V
Collector Emitter Breakdown Voltage	15V
Collector Emitter Voltage (VCEO)	15V
Collector-emitter Voltage-Max	15V
Contact Plating	Tin
Continuous Collector Current	25mA
Emitter Base Voltage (VEBO)	2V
Frequency	5GHz
Gain Bandwidth Product	5GHz
hFE Min	65
Lead Free	Lead Free
Max Breakdown Voltage	15V
Max Collector Current	25mA
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	300mW
Mount	Surface Mount
Number of Elements	1
Output Power	300mW
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	300mW
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	5GHz
Weight	0.00709oz