NPN bipolar junction transistor for high-frequency applications, operating up to 9GHz. Features a 15V collector-emitter breakdown voltage and a maximum continuous collector current of 18mA. Housed in a compact SOT-323 surface-mount package with tin plating. Offers a gain of 17dB and 4dBm output power. Operates across a wide temperature range from -65°C to 175°C, with 150mW maximum power dissipation. RoHS compliant and lead-free.
Frequency9GHz
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFS505,115 technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 18mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 9GHz |
| Gain | 17dB |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 18mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 9000 MHz |
| Output Power (dBm) | 4dBm |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFS505,115 Datasheet
Download the complete datasheet for NXP BFS505,115 to view detailed technical specifications.
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