NPN RF BJT transistor, surface mount, TO-236-3 package. Features 2.3GHz gain bandwidth product and transition frequency, with a maximum collector current of 6.5mA and a collector-emitter breakdown voltage of 5V. Operates from -65°C to 150°C with a maximum power dissipation of 30mW. Supplied in tape and reel packaging.
Frequency2300 MHz
PackageTO-236-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFT25,215 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 8V |
| Collector Emitter Breakdown Voltage | 5V |
| Collector-emitter Voltage-Max | 5V |
| Contact Plating | Tin |
| Continuous Collector Current | 6.5mA |
| Emitter Base Voltage (VEBO) | 2V |
| Gain Bandwidth Product | 2.3GHz |
| Height | 1mm |
| hFE Min | 20 |
| Length | 3mm |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 6.5mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30mW |
| Mount | Surface Mount |
| Operating Frequency | 2300 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 2.3GHz |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFT25,215 Datasheet
Download the complete datasheet for NXP BFT25,215 to view detailed technical specifications.
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