
RF Transistor, NPN polarity, designed for high-frequency applications with an operating frequency of 45 GHz. Features a 2.8V collector-emitter voltage, 70mA continuous collector current, and 220mW power dissipation. This surface mount device offers a gain of 25.5dB and a minimum hFE of 155, packaged in a DFP case with tin plating. Operating temperature range spans from -65°C to 150°C, with lead-free and RoHS compliant construction.
NXP BFU760F,115 technical specifications.
| Package/Case | DFP |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 2.8V |
| Collector-emitter Voltage-Max | 2.8V |
| Contact Plating | Tin |
| Continuous Collector Current | 70mA |
| Emitter Base Voltage (VEBO) | 1V |
| Frequency | 45GHz |
| Gain | 25.5dB |
| hFE Min | 155 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 70mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 220mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 45 GHz |
| Output Power | 220mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 220mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 45GHz |
| RoHS | Compliant |
Download the complete datasheet for NXP BFU760F,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
