N-channel RF transistor delivering 250W maximum output power at 960MHz, with a 1.215GHz maximum frequency. Features 75V drain-to-source breakdown voltage, 300mA continuous drain current, and 60mΩ drain-to-source resistance. Operates across a wide temperature range of -65°C to 200°C, with 700W maximum power dissipation. This lead-free, RoHS-compliant component is designed for screw mounting and comes packaged in rail/tube.
NXP BLA0912-250,112 technical specifications.
| Continuous Drain Current (ID) | 300mA |
| Current Rating | 45A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 6ns |
| Frequency | 960MHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 22V |
| Lead Free | Lead Free |
| Max Frequency | 1.215GHz |
| Min Frequency | 960MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 250W |
| Max Power Dissipation | 700W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 250W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| RoHS Compliant | Yes |
| Test Voltage | 36V |
| Voltage Rating | 75V |
| RoHS | Compliant |
Download the complete datasheet for NXP BLA0912-250,112 to view detailed technical specifications.
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