N-channel RF MOSFET featuring 75V drain-to-source breakdown voltage and 2.2A continuous drain current. This component operates efficiently up to 1.09GHz with a typical gain of 15dB. It offers a maximum output power of 10W and a power dissipation of 25W, suitable for demanding applications. Designed for screw mounting and available in rail/tube packaging, this RoHS compliant device operates across a wide temperature range from -65°C to 200°C.
Frequency1.09GHz
Voltage Rating75V
Current Rating2.2A
MountingScrew
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Technical Specifications
NXP BLA1011-10,112 technical specifications.
General
Continuous Drain Current (ID)
2.2A
Current Rating
2.2A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
75V
DS Breakdown Voltage-Min
75V
Frequency
1.09GHz
Gain
15dB
Gate to Source Voltage (Vgs)
15V
Lead Free
Lead Free
Max Frequency
1.09GHz
Min Frequency
1.03GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
10W
Max Power Dissipation
25W
Mount
Screw
Number of Elements
1
Output Power
10W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
36V
Voltage Rating
75V
Compliance
RoHS
Compliant
Datasheet
NXP BLA1011-10,112 Datasheet
Download the complete datasheet for NXP BLA1011-10,112 to view detailed technical specifications.
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