N-channel RF transistor designed for high-power applications, operating up to 1.09GHz with a 200W output power and 250W max output power. Features a 75V drain-to-source breakdown voltage, 60mΩ drain-to-source resistance, and 13dB gain. With a maximum power dissipation of 700W and a wide operating temperature range of -65°C to 200°C, this lead-free, RoHS-compliant component is suitable for demanding RF circuits. Mounting is via screw, and it is supplied in rail/tube packaging.
Frequency1.09GHz
Voltage Rating75V
Current Rating1uA
MountingScrew
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Technical Specifications
NXP BLA1011-200,112 technical specifications.
General
| Current Rating | 1uA |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 75V |
| DS Breakdown Voltage-Min | 75V |
| Fall Time | 50ns |
| Frequency | 1.09GHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 22V |
| Height | 4.72mm |
| Lead Free | Lead Free |
| Length | 34.16mm |
| Max Frequency | 1.09GHz |
| Min Frequency | 1.03GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 250W |
| Max Power Dissipation | 700W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 200W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| RoHS Compliant | Yes |
| Test Voltage | 36V |
| Voltage Rating | 75V |
| Width | 9.91mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLA1011-200,112 Datasheet
Download the complete datasheet for NXP BLA1011-200,112 to view detailed technical specifications.
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