N-channel RF transistor designed for high-power applications, operating up to 1.09GHz with a 200W output power and 250W max output power. Features a 75V drain-to-source breakdown voltage, 60mΩ drain-to-source resistance, and 13dB gain. With a maximum power dissipation of 700W and a wide operating temperature range of -65°C to 200°C, this lead-free, RoHS-compliant component is suitable for demanding RF circuits. Mounting is via screw, and it is supplied in rail/tube packaging.
Frequency1.09GHz
Voltage Rating75V
Current Rating1uA
MountingScrew
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Technical Specifications
NXP BLA1011-200,112 technical specifications.
General
Current Rating
1uA
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
75V
DS Breakdown Voltage-Min
75V
Fall Time
50ns
Frequency
1.09GHz
Gain
13dB
Gate to Source Voltage (Vgs)
22V
Height
4.72mm
Lead Free
Lead Free
Length
34.16mm
Max Frequency
1.09GHz
Min Frequency
1.03GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
250W
Max Power Dissipation
700W
Mount
Screw
Number of Elements
1
Output Power
200W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
700W
RoHS Compliant
Yes
Test Voltage
36V
Voltage Rating
75V
Width
9.91mm
Compliance
RoHS
Compliant
Datasheet
NXP BLA1011-200,112 Datasheet
Download the complete datasheet for NXP BLA1011-200,112 to view detailed technical specifications.
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