N-channel RF MOSFET transistor featuring 75V drain-source breakdown voltage and 15A continuous drain current. Operates at frequencies up to 1.09GHz with a typical gain of 16.5dB and 300W maximum output power. Boasts a low drain-source on-resistance of 1.2 Ohms and a fast 5ns fall time. Designed for screw mounting with a wide operating temperature range of -65°C to 200°C. This RoHS compliant component is supplied in bulk packaging.
Frequency1.09GHz
Voltage Rating65V
Current Rating15A
MountingScrew
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Technical Specifications
NXP BLA1011-300,112 technical specifications.
General
Continuous Drain Current (ID)
15A
Current Rating
15A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
75V
DS Breakdown Voltage-Min
65V
Fall Time
5ns
Frequency
1.09GHz
Gain
16.5dB
Gate to Source Voltage (Vgs)
15V
Lead Free
Lead Free
Max Frequency
1.09GHz
Min Frequency
1.03GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
300W
Max Power Dissipation
25W
Mount
Screw
Number of Elements
1
Output Power
300W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
RoHS Compliant
Yes
Test Voltage
32V
Voltage Rating
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLA1011-300,112 Datasheet
Download the complete datasheet for NXP BLA1011-300,112 to view detailed technical specifications.
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