N-channel RF MOSFET, 65V drain-source breakdown voltage, 4.5A continuous drain current, and 45W maximum output power. Features 14dB gain at 960MHz, 300mΩ drain-source resistance, and 46pF input capacitance. Operates from -65°C to 200°C, with a maximum operating frequency of 1GHz. Packaged in a 3-pin LDMOST configuration for screw mounting.
Frequency960MHz
Voltage Rating65V
Current Rating4.5A
MountingScrew
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Technical Specifications
NXP BLF1046,112 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 960MHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.67mm |
| Input Capacitance | 46pF |
| Lead Free | Lead Free |
| Length | 20.45mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 45W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 45W |
| Package Quantity | 20 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 26V |
| Voltage Rating | 65V |
| Width | 5.97mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF1046,112 Datasheet
Download the complete datasheet for NXP BLF1046,112 to view detailed technical specifications.
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