N-channel RF MOSFET, 65V drain-source breakdown voltage, 4.5A continuous drain current, and 45W maximum output power. Features 14dB gain at 960MHz, 300mΩ drain-source resistance, and 46pF input capacitance. Operates from -65°C to 200°C, with a maximum operating frequency of 1GHz. Packaged in a 3-pin LDMOST configuration for screw mounting.
Frequency960MHz
Voltage Rating65V
Current Rating4.5A
MountingScrew
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Technical Specifications
NXP BLF1046,112 technical specifications.
General
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
65V
Frequency
960MHz
Gain
14dB
Gate to Source Voltage (Vgs)
20V
Height
4.67mm
Input Capacitance
46pF
Lead Free
Lead Free
Length
20.45mm
Max Frequency
1GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
45W
Mount
Screw
Number of Elements
1
Output Power
45W
Package Quantity
20
Packaging
Tray
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
26V
Voltage Rating
65V
Width
5.97mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF1046,112 Datasheet
Download the complete datasheet for NXP BLF1046,112 to view detailed technical specifications.
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