N-Channel RF MOSFET transistor designed for high-power applications. Features a 65V drain-source voltage rating and a continuous drain current of 25A. Operates efficiently at frequencies up to 108MHz, delivering 150W of output power. Offers a low drain-to-source resistance of 150mR and a maximum power dissipation of 220W. This component is RoHS compliant and lead-free, packaged for bulk distribution.
Frequency108MHz
Voltage Rating65V
Current Rating25A
MountingScrew
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Technical Specifications
NXP BLF147,112 technical specifications.
General
| Continuous Drain Current (ID) | 25A |
| Current Rating | 25A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 108MHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.27mm |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Length | 24.9mm |
| Max Frequency | 108MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 150W |
| Max Power Dissipation | 220W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 28 MHz |
| Output Power | 150W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 12.86mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF147,112 Datasheet
Download the complete datasheet for NXP BLF147,112 to view detailed technical specifications.
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