N-Channel RF MOSFET transistor designed for high-power applications. Features a 65V drain-source voltage rating and a continuous drain current of 25A. Operates efficiently at frequencies up to 108MHz, delivering 150W of output power. Offers a low drain-to-source resistance of 150mR and a maximum power dissipation of 220W. This component is RoHS compliant and lead-free, packaged for bulk distribution.
Frequency108MHz
Voltage Rating65V
Current Rating25A
MountingScrew
Quick Jump:
Technical Specifications
NXP BLF147,112 technical specifications.
General
Continuous Drain Current (ID)
25A
Current Rating
25A
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
108MHz
Gain
14dB
Gate to Source Voltage (Vgs)
20V
Height
7.27mm
Input Capacitance
450pF
Lead Free
Lead Free
Length
24.9mm
Max Frequency
108MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
150W
Max Power Dissipation
220W
Mount
Screw
Number of Elements
1
Operating Frequency
28 MHz
Output Power
150W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Width
12.86mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF147,112 Datasheet
Download the complete datasheet for NXP BLF147,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
