N-channel RF MOSFET, 40V Drain-Source Breakdown Voltage, 1A Continuous Drain Current, 175MHz Max Frequency. Features 2W Max Output Power, 5.7W Power Dissipation, and 13dB Gain. Operates from -65°C to 200°C, with 5.3pF Input Capacitance. Packaged in an 8-pin CDIP SMD for surface mounting, supplied on tape and reel.
Frequency175MHz
PackageSMD/SMT
Voltage Rating40V
Current Rating1A
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Technical Specifications
NXP BLF202,115 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
40V
Frequency
175MHz
Gain
13dB
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.3pF
Length
5.94mm
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
2W
Max Power Dissipation
5.7W
Mount
Surface Mount
Number of Elements
1
Output Power
2W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5.7W
RoHS Compliant
Yes
Test Voltage
12.5V
Voltage Rating
40V
Width
4.93mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF202,115 Datasheet
Download the complete datasheet for NXP BLF202,115 to view detailed technical specifications.
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