N-channel RF MOSFET, 40V Drain-Source Breakdown Voltage, 1A Continuous Drain Current, 175MHz Max Frequency. Features 2W Max Output Power, 5.7W Power Dissipation, and 13dB Gain. Operates from -65°C to 200°C, with 5.3pF Input Capacitance. Packaged in an 8-pin CDIP SMD for surface mounting, supplied on tape and reel.
Frequency175MHz
PackageSMD/SMT
Voltage Rating40V
Current Rating1A
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Technical Specifications
NXP BLF202,115 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 175MHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.3pF |
| Length | 5.94mm |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 2W |
| Max Power Dissipation | 5.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 2W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.7W |
| RoHS Compliant | Yes |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
| Width | 4.93mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF202,115 Datasheet
Download the complete datasheet for NXP BLF202,115 to view detailed technical specifications.
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