N-channel RF MOSFET transistor for general applications, featuring a 65V drain-to-source breakdown voltage and 4.5A continuous drain current. Operates efficiently up to 2.2GHz with a typical gain of 10dB and 30W maximum output power. Designed for screw mounting with a 3-pin LDMOST package, this lead-free and RoHS compliant component offers a wide operating temperature range from -65°C to 200°C.
Frequency2GHz
Voltage Rating65V
Current Rating4.5A
MountingScrew
Quick Jump:
Technical Specifications
NXP BLF2045,112 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 340mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2GHz |
| Gain | 10dB |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 4.67mm |
| Input Capacitance | 38pF |
| Lead Free | Lead Free |
| Length | 20.45mm |
| Max Frequency | 2.2GHz |
| Min Frequency | 1.8GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 30W |
| Package Quantity | 60 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 26V |
| Voltage Rating | 65V |
| Width | 5.97mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF2045,112 Datasheet
Download the complete datasheet for NXP BLF2045,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
