N-channel RF MOSFET transistor for general applications, featuring a 65V drain-to-source breakdown voltage and 4.5A continuous drain current. Operates efficiently up to 2.2GHz with a typical gain of 10dB and 30W maximum output power. Designed for screw mounting with a 3-pin LDMOST package, this lead-free and RoHS compliant component offers a wide operating temperature range from -65°C to 200°C.
Frequency2GHz
Voltage Rating65V
Current Rating4.5A
MountingScrew
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Technical Specifications
NXP BLF2045,112 technical specifications.
General
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
340mR
Drain to Source Voltage (Vdss)
65V
Frequency
2GHz
Gain
10dB
Gate to Source Voltage (Vgs)
15V
Height
4.67mm
Input Capacitance
38pF
Lead Free
Lead Free
Length
20.45mm
Max Frequency
2.2GHz
Min Frequency
1.8GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Mount
Screw
Number of Elements
1
Output Power
30W
Package Quantity
60
Packaging
Tray
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
26V
Voltage Rating
65V
Width
5.97mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF2045,112 Datasheet
Download the complete datasheet for NXP BLF2045,112 to view detailed technical specifications.
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