N-CHANNEL RF Transistor designed for high-power applications. Features a continuous drain current of 6A, drain-to-source voltage of 65V, and a maximum operating frequency of 175 MHz. Delivers 30W of output power with a gain of 15.5dB. Operates across a wide temperature range from -65°C to 200°C. Surface mountable with screw terminal option, packaged in rail/tube.
Frequency175MHz
Voltage Rating65V
Current Rating6A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF245,112 technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 175MHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.47mm |
| Input Capacitance | 125pF |
| Length | 24.87mm |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 68W |
| Mount | Surface Mount, Screw |
| Noise Figure | 2dB |
| Number of Elements | 1 |
| Operating Frequency | 175 MHz |
| Output Power | 30W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 9.73mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF245,112 Datasheet
Download the complete datasheet for NXP BLF245,112 to view detailed technical specifications.
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