N-CHANNEL RF Transistor designed for high-power applications. Features a continuous drain current of 6A, drain-to-source voltage of 65V, and a maximum operating frequency of 175 MHz. Delivers 30W of output power with a gain of 15.5dB. Operates across a wide temperature range from -65°C to 200°C. Surface mountable with screw terminal option, packaged in rail/tube.
Frequency175MHz
Voltage Rating65V
Current Rating6A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF245,112 technical specifications.
General
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
175MHz
Gain
15.5dB
Gate to Source Voltage (Vgs)
20V
Height
7.47mm
Input Capacitance
125pF
Length
24.87mm
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
68W
Mount
Surface Mount, Screw
Noise Figure
2dB
Number of Elements
1
Operating Frequency
175 MHz
Output Power
30W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Reach SVHC Compliant
No
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Width
9.73mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF245,112 Datasheet
Download the complete datasheet for NXP BLF245,112 to view detailed technical specifications.
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