N-channel RF power MOSFET for VHF band applications, featuring 300W output power and 500W power dissipation. This 4-pin SOT-262A1 packaged transistor offers a 65V drain-to-source breakdown voltage and a 25A continuous drain current. Operating at frequencies up to 225MHz, it provides a power gain of 13dB. Designed for screw mounting, this lead-free and RoHS compliant component operates across a temperature range of -65°C to 150°C.
Frequency225MHz
Current Rating25A
MountingScrew
PolarityN-CHANNEL
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Technical Specifications
NXP BLF248 technical specifications.
General
Continuous Drain Current (ID)
25A
Current Rating
25A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
65V
Frequency
225MHz
Gain
10dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
225MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Output Power
300W
Max Power Dissipation
500W
Mount
Screw
Number of Elements
2
Output Power
300W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Power Gain
13dB
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLF248 Datasheet
Download the complete datasheet for NXP BLF248 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.