N-channel RF power MOSFET for VHF band applications, featuring 300W output power and 500W power dissipation. This 4-pin SOT-262A1 packaged transistor offers a 65V drain-to-source breakdown voltage and a 25A continuous drain current. Operating at frequencies up to 225MHz, it provides a power gain of 13dB. Designed for screw mounting, this lead-free and RoHS compliant component operates across a temperature range of -65°C to 150°C.
Frequency225MHz
Current Rating25A
MountingScrew
PolarityN-CHANNEL
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Technical Specifications
NXP BLF248 technical specifications.
General
| Continuous Drain Current (ID) | 25A |
| Current Rating | 25A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 225MHz |
| Gain | 10dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 225MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 300W |
| Max Power Dissipation | 500W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 300W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Power Gain | 13dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF248 Datasheet
Download the complete datasheet for NXP BLF248 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.