N-channel RF power transistor designed for high-frequency applications. Features a continuous drain current of 25A and a drain-to-source breakdown voltage of 65V. Delivers 300W of output power at a maximum frequency of 225MHz, with a typical gain of 10dB. Offers a maximum power dissipation of 500W and operates across a wide temperature range from -65°C to 150°C. Mounts via screw for robust thermal management.
Frequency225MHz
Voltage Rating65V
Current Rating25A
MountingScrew
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Technical Specifications
NXP BLF248,112 technical specifications.
General
| Continuous Drain Current (ID) | 25A |
| Current Rating | 25A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 225MHz |
| Gain | 10dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.77mm |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Length | 34.17mm |
| Max Frequency | 225MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 300W |
| Max Power Dissipation | 500W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 300W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| RoHS Compliant | No |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 10.29mm |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP BLF248,112 Datasheet
Download the complete datasheet for NXP BLF248,112 to view detailed technical specifications.
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