N-channel RF power transistor designed for high-frequency applications. Features a continuous drain current of 25A and a drain-to-source breakdown voltage of 65V. Delivers 300W of output power at a maximum frequency of 225MHz, with a typical gain of 10dB. Offers a maximum power dissipation of 500W and operates across a wide temperature range from -65°C to 150°C. Mounts via screw for robust thermal management.
Frequency225MHz
Voltage Rating65V
Current Rating25A
MountingScrew
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Technical Specifications
NXP BLF248,112 technical specifications.
General
Continuous Drain Current (ID)
25A
Current Rating
25A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
225MHz
Gain
10dB
Gate to Source Voltage (Vgs)
20V
Height
5.77mm
Input Capacitance
500pF
Lead Free
Lead Free
Length
34.17mm
Max Frequency
225MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Output Power
300W
Max Power Dissipation
500W
Mount
Screw
Number of Elements
2
Output Power
300W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
RoHS Compliant
No
Test Voltage
28V
Voltage Rating
65V
Width
10.29mm
Compliance
RoHS
Not Compliant
Datasheet
NXP BLF248,112 Datasheet
Download the complete datasheet for NXP BLF248,112 to view detailed technical specifications.
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