The BLF369,112 is a 65V N-CHANNEL RF transistor with a maximum frequency of 500MHz and a maximum operating temperature of 200°C. It is packaged in a SOT package and is lead free. The transistor has a drain to source breakdown voltage of 65V and a drain to source resistance of 40mR. It is RoHS compliant and has a gain of 17dB.
Frequency225MHz
PackageSOT
Voltage Rating65V
MountingScrew
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Technical Specifications
NXP BLF369,112 technical specifications.
General
| Package/Case | SOT |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 225MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 500MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 500W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 500W |
| Package Quantity | 15 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 32V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF369,112 Datasheet
Download the complete datasheet for NXP BLF369,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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