Trans RF MOSFET N-CH 65V 2.3A 3-Pin CDIP SMD
PackageSMD/SMT
Current Rating650mA
PolarityP-CHANNEL
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Technical Specifications
NXP BLF3G21-6 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | 650mA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 2.07R |
| Drain to Source Voltage (Vdss) | 65V |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| RoHS Compliant | Yes |
| DC Rated Voltage | 26V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF3G21-6 Datasheet
Download the complete datasheet for NXP BLF3G21-6 to view detailed technical specifications.
No datasheet is available for this part.