RF MOSFET, N-Channel, 65V Drain-Source Breakdown Voltage, 2.3A Continuous Drain Current, 2GHz Frequency, 15.5dB Gain, 7W Max Output Power. Features 2.07 Ohm Drain-Source Resistance, 13V Gate-Source Voltage, and a 2.2GHz Max Frequency. Operates from -65°C to 200°C. Packaged in a 3-Pin CDIP SMD for surface mounting. Lead-free and RoHS compliant.
Frequency2GHz
PackageSMD/SMT
Voltage Rating65V
Current Rating2.3A
Quick Jump:
Technical Specifications
NXP BLF3G21-6,112 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | 2.3A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 2.07R |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 2.2GHz |
| Min Frequency | 1.88GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 6W |
| Package Quantity | 20 |
| Packaging | Tray |
| Polarity | P-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 26V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF3G21-6,112 Datasheet
Download the complete datasheet for NXP BLF3G21-6,112 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
