The BLF4G10LS-120 is a 65V N-CHANNEL RF transistor with a continuous drain current of 12A and a gate to source voltage of 15V. It is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. The transistor is packaged in a flatpack and is compliant with RoHS regulations. It is suitable for use in high-power RF applications.
Current Rating650mA
PolarityN-CHANNEL
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Technical Specifications
NXP BLF4G10LS-120 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Current Rating | 650mA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 65V |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 15V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| DC Rated Voltage | 28V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF4G10LS-120 Datasheet
Download the complete datasheet for NXP BLF4G10LS-120 to view detailed technical specifications.
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