RF MOSFET transistor, N-channel enhancement mode, single configuration. Features 65V maximum drain-source voltage and 12A maximum continuous drain current. Operates within a frequency range of 1800 MHz to 2000 MHz, delivering 100W typical output power with 13.5dB typical power gain in 2-tone mode. Packaged in a 3-pin SOT-502B (SOT) surface-mount lead-frame SMT with flat leads, measuring 20.7mm(Max) length, 9.91mm(Max) width, and 4.72mm(Max) height. Suitable for operation between -65°C and 200°C.
PackageSOT-502B
MountingSurface Mount
Power100(Typ)W
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Technical Specifications
NXP BLF4G20S-110B,112 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-502B
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
20.7(Max)
Package Width (mm)
9.91(Max)
Package Height (mm)
4.72(Max)
Seated Plane Height (mm)
4.72(Max)
Package Material
Ceramic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage
65V
Maximum Continuous Drain Current
12A
Minimum Frequency
1800MHz
Maximum Frequency
2000MHz
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Mode of Operation
2-Tone
Typical Power Gain
13.5dB
Output Power
100(Typ)W
Compliance
Cage Code
H1R01
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BLF4G20S-110B,112 Datasheet
Download the complete datasheet for NXP BLF4G20S-110B,112 to view detailed technical specifications.
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