N-Channel RF MOSFET, 40V Drain-to-Source Breakdown Voltage, 1A Continuous Drain Current, 500MHz Max Frequency, 2W Output Power, 10W Power Dissipation, 200°C Max Operating Temperature, Surface Mount, Lead Free, RoHS Compliant.
Frequency500MHz
Voltage Rating40V
Current Rating1A
MountingSurface Mount
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Technical Specifications
NXP BLF521,112 technical specifications.
General
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
500MHz
Gain
13dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
500MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
2W
Max Power Dissipation
10W
Mount
Surface Mount
Number of Elements
1
Output Power
2W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
10W
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
12.5V
Voltage Rating
40V
Compliance
RoHS
Compliant
Datasheet
NXP BLF521,112 Datasheet
Download the complete datasheet for NXP BLF521,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.