N-channel RF MOSFET transistor featuring 65V drain-to-source breakdown voltage and 3.5A continuous drain current. Operates up to 960MHz with 7dB gain and 20W maximum output power. Offers 1.25 Ohm drain-to-source resistance and 32pF input capacitance. Designed for screw mounting with a maximum power dissipation of 48W.
Frequency960MHz
Voltage Rating65V
Current Rating3.5A
MountingScrew
Quick Jump:
Technical Specifications
NXP BLF544,112 technical specifications.
General
Continuous Drain Current (ID)
3.5A
Current Rating
3.5A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
1.25R
Drain to Source Voltage (Vdss)
65V
Frequency
960MHz
Gain
7dB
Gate to Source Voltage (Vgs)
20V
Height
6.81mm
Input Capacitance
32pF
Length
24.9mm
Max Frequency
960MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
20W
Max Power Dissipation
48W
Mount
Screw
Number of Elements
1
Output Power
20W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
48W
RoHS Compliant
No
Test Voltage
28V
Voltage Rating
65V
Width
5.97mm
Compliance
RoHS
Not Compliant
Datasheet
NXP BLF544,112 Datasheet
Download the complete datasheet for NXP BLF544,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.