N-channel RF MOSFET transistor featuring a 65V drain-source breakdown voltage and a continuous drain current of 15A. This component operates up to 500MHz with a typical gain of 11dB and offers a maximum output power of 150W. It is housed in a SOT package, designed for screw mounting, and supports a wide operating temperature range from -65°C to 200°C. The device boasts a low drain-source on-resistance of 300mR and a maximum power dissipation of 330W, with RoHS compliance and lead-free construction.
Frequency500MHz
PackageSOT
Voltage Rating65V
Current Rating15A
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Technical Specifications
NXP BLF548,112 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
15A
Current Rating
15A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
500MHz
Gain
11dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
500MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
150W
Max Power Dissipation
330W
Mount
Screw
Number of Elements
2
Output Power
150W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
330W
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLF548,112 Datasheet
Download the complete datasheet for NXP BLF548,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.