N-channel RF power LDMOS transistor designed for high-power applications. Features a Drain to Source Breakdown Voltage of 110V and a continuous Drain Current rating of 88A. Offers a maximum output power of 1.2kW with a power gain of 24dB at 108MHz, operating up to a maximum frequency of 225MHz. This component is lead-free, RoHS compliant, and suitable for screw mounting, with an operating temperature range from -65°C to 225°C.
Frequency108MHz
Voltage Rating110V
Current Rating88A
MountingScrew
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Technical Specifications
NXP BLF578,112 technical specifications.
General
| Continuous Drain Current (ID) | 88A |
| Current Rating | 88A |
| Drain to Source Breakdown Voltage | 110V |
| Drain to Source Voltage (Vdss) | 110V |
| DS Breakdown Voltage-Min | 50V |
| Frequency | 108MHz |
| Gain | 24dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Max Frequency | 225MHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 1.2kW |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 1.2kW |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Gain | 24dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 110V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF578,112 Datasheet
Download the complete datasheet for NXP BLF578,112 to view detailed technical specifications.
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