N-channel LDMOS RF MOSFET transistor designed for high-frequency applications. Features a 65V drain-to-source breakdown voltage and operates at 1.3GHz with a typical gain of 19dB. Delivers 35W output power, suitable for demanding RF power amplification. Maximum operating temperature of 150°C ensures reliability in harsh environments. This lead-free, RoHS-compliant component is supplied in rail/tube packaging.
Frequency1.3GHz
PolarityN-CHANNEL
Power35W
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Technical Specifications
NXP BLF642,112 technical specifications.
General
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
1.3GHz
Gain
19dB
Gate to Source Voltage (Vgs)
11V
Lead Free
Lead Free
Max Operating Temperature
150°C
Output Power
35W
Package Quantity
60
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
NXP BLF642,112 Datasheet
Download the complete datasheet for NXP BLF642,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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