N-channel LDMOS RF MOSFET transistor designed for high-frequency applications. Features a 65V drain-to-source breakdown voltage and operates at 1.3GHz with a typical gain of 19dB. Delivers 35W output power, suitable for demanding RF power amplification. Maximum operating temperature of 150°C ensures reliability in harsh environments. This lead-free, RoHS-compliant component is supplied in rail/tube packaging.
Frequency1.3GHz
PolarityN-CHANNEL
Power35W
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Technical Specifications
NXP BLF642,112 technical specifications.
General
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 1.3GHz |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Output Power | 35W |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF642,112 Datasheet
Download the complete datasheet for NXP BLF642,112 to view detailed technical specifications.
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