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Technical Specifications
NXP BLF645112 technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 32V |
| Gain | 18dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Max Frequency | 1.3GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 100W |
| Mount | Screw |
| Number of Elements | 2 |
| Operating Frequency | 1.3 GHz |
| Output Power | 100W |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF645112 Datasheet
Download the complete datasheet for NXP BLF645112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.