N-CHANNEL RF Transistor featuring 65V Drain to Source Voltage and 18A Continuous Drain Current. Delivers 120W Output Power at 600MHz with 14.5dB Gain, supporting up to 800 MHz operation. Designed for high-power applications with a maximum operating temperature of 200°C and gold contact plating. Mounting is via screw, and the component is RoHS compliant and lead-free.
Frequency600MHz
Voltage Rating65V
Current Rating18A
MountingScrew
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Technical Specifications
NXP BLF647,112 technical specifications.
General
Contact Plating
Gold
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
600MHz
Gain
14.5dB
Gate to Source Voltage (Vgs)
15V
Height
5.77mm
Lead Free
Lead Free
Length
34.16mm
Max Frequency
800MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
150W
Max Power Dissipation
290W
Mount
Screw
Number of Elements
2
Operating Frequency
800 MHz
Output Power
120W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Width
10.31mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF647,112 Datasheet
Download the complete datasheet for NXP BLF647,112 to view detailed technical specifications.
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