N-CHANNEL RF Transistor featuring 65V Drain to Source Voltage and 18A Continuous Drain Current. Delivers 120W Output Power at 600MHz with 14.5dB Gain, supporting up to 800 MHz operation. Designed for high-power applications with a maximum operating temperature of 200°C and gold contact plating. Mounting is via screw, and the component is RoHS compliant and lead-free.
Frequency600MHz
Voltage Rating65V
Current Rating18A
MountingScrew
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Technical Specifications
NXP BLF647,112 technical specifications.
General
| Contact Plating | Gold |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 600MHz |
| Gain | 14.5dB |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 5.77mm |
| Lead Free | Lead Free |
| Length | 34.16mm |
| Max Frequency | 800MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 150W |
| Max Power Dissipation | 290W |
| Mount | Screw |
| Number of Elements | 2 |
| Operating Frequency | 800 MHz |
| Output Power | 120W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 10.31mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF647,112 Datasheet
Download the complete datasheet for NXP BLF647,112 to view detailed technical specifications.
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