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Technical Specifications
NXP BLF647P112 technical specifications.
General
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 1.5GHz |
| Gain | 18dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Output Power | 200W |
| Package Quantity | 20 |
| Packaging | Bulk |
| Test Voltage | 32V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF647P112 Datasheet
Download the complete datasheet for NXP BLF647P112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.