N-channel RF MOSFET with 65V drain-source breakdown voltage and 32A continuous drain current. Features 230mΩ drain-source resistance and operates at frequencies between 869MHz and 894MHz, delivering 26.5W output power. Designed for surface mounting in a 3-pin SOT-502B package, this component offers a gain of 21dB and a maximum power dissipation of 125W.
Frequency891.5MHz
Voltage Rating65V
Current Rating32A
MountingSurface Mount
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Technical Specifications
NXP BLF6G10LS-135R,118 technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 891.5MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 13V |
| Max Frequency | 894MHz |
| Min Frequency | 869MHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -55°C |
| Max Output Power | 26.5W |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 26.5W |
| Package Quantity | 100 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| RoHS Compliant | No |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP BLF6G10LS-135R,118 Datasheet
Download the complete datasheet for NXP BLF6G10LS-135R,118 to view detailed technical specifications.
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