RF MOSFET transistor featuring N-channel polarity and LDMOS technology. Delivers 25W maximum output power with a continuous drain current of 29A. Operates at frequencies up to 2GHz, with a drain-to-source breakdown voltage of 65V and a low on-resistance of 160mR. Designed for screw mounting and available in a 3-pin SOT-502A package, this component is RoHS compliant and lead-free.
Frequency1.99GHz
Voltage Rating65V
Current Rating29A
MountingScrew
Quick Jump:
Technical Specifications
NXP BLF6G20-110,112 technical specifications.
General
Continuous Drain Current (ID)
29A
Current Rating
29A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
65V
Frequency
1.99GHz
Gain
19dB
Gate to Source Voltage (Vgs)
13V
Lead Free
Lead Free
Max Frequency
2GHz
Min Frequency
1.93GHz
Max Operating Temperature
225°C
Min Operating Temperature
-65°C
Max Output Power
25W
Mount
Screw
Number of Elements
1
Output Power
25W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Technology
LDMOS
Test Voltage
28V
Voltage Rating
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLF6G20-110,112 Datasheet
Download the complete datasheet for NXP BLF6G20-110,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
