N-channel RF MOSFET transistor designed for high-frequency applications, operating up to 2GHz with a maximum output power of 2.5W. Features a 65V drain-to-source breakdown voltage and a continuous drain current rating of 13A. Offers a typical gain of 19.2dB at 1.88GHz and a low on-resistance of 200mR. This LDMOS technology component is RoHS compliant and lead-free, suitable for screw mounting.
Frequency1.88GHz
Voltage Rating65V
Current Rating13A
MountingScrew
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Technical Specifications
NXP BLF6G20-45,112 technical specifications.
General
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
65V
Frequency
1.88GHz
Gain
19.2dB
Gate to Source Voltage (Vgs)
13V
Lead Free
Lead Free
Max Frequency
2GHz
Min Frequency
1.805GHz
Max Operating Temperature
225°C
Min Operating Temperature
-65°C
Max Output Power
2.5W
Mount
Screw
Number of Elements
1
Output Power
2.5W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
RoHS Compliant
Yes
Technology
LDMOS
Test Voltage
28V
Voltage Rating
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLF6G20-45,112 Datasheet
Download the complete datasheet for NXP BLF6G20-45,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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