N-channel RF MOSFET with 65V drain-source breakdown voltage and 29A continuous drain current. Features 160mΩ drain-source resistance, 25W maximum output power, and operates up to 2GHz with 19dB gain. This surface mount component utilizes LDMOS technology and is RoHS compliant, suitable for a wide operating temperature range of -65°C to 225°C.
Frequency1.99GHz
Voltage Rating65V
Current Rating29A
MountingSurface Mount
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Technical Specifications
NXP BLF6G20LS-110,112 technical specifications.
General
| Continuous Drain Current (ID) | 29A |
| Current Rating | 29A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 28V |
| Frequency | 1.99GHz |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 2V |
| Lead Free | Lead Free |
| Max Frequency | 2GHz |
| Min Frequency | 1.93GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 25W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF6G20LS-110,112 Datasheet
Download the complete datasheet for NXP BLF6G20LS-110,112 to view detailed technical specifications.
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