N-channel RF MOSFET with 65V drain-source breakdown voltage and 39A continuous drain current. Features 200mΩ drain-source resistance and operates at frequencies from 1.93GHz to 1.99GHz, delivering 35.5W output power with 16.5dB gain. This surface-mount LDMOS transistor is RoHS compliant and operates across a temperature range of -65°C to 225°C.
Frequency1.99GHz
Voltage Rating65V
Current Rating39A
MountingSurface Mount
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Technical Specifications
NXP BLF6G20LS-140,112 technical specifications.
General
Continuous Drain Current (ID)
39A
Current Rating
39A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
65V
Frequency
1.99GHz
Gain
16.5dB
Gate to Source Voltage (Vgs)
13V
Lead Free
Lead Free
Max Frequency
1.99GHz
Min Frequency
1.93GHz
Max Operating Temperature
225°C
Min Operating Temperature
-65°C
Max Output Power
35.5W
Mount
Surface Mount
Number of Elements
1
Output Power
35.5W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Technology
LDMOS
Test Voltage
28V
Voltage Rating
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLF6G20LS-140,112 Datasheet
Download the complete datasheet for NXP BLF6G20LS-140,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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