N-channel RF MOSFET transistor designed for high-frequency applications, operating from 2.5 GHz to 2.7 GHz. Features a 65V drain-to-source voltage rating and a continuous drain current capability of 20A. Delivers 7W maximum output power with 18dB gain. Constructed with a 3-pin CDFM package, suitable for screw mounting, and operates across a wide temperature range of -65°C to 200°C. This RoHS compliant component is lead-free.
Frequency2.7GHz
Voltage Rating65V
Current Rating20A
MountingScrew
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Technical Specifications
NXP BLF6G27-45,112 technical specifications.
General
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Resistance
385mR
Drain to Source Voltage (Vdss)
65V
Frequency
2.7GHz
Gain
18dB
Gate to Source Voltage (Vgs)
13V
Height
4.62mm
Lead Free
Lead Free
Length
20.45mm
Max Frequency
2.7GHz
Min Frequency
2.5GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
7W
Mount
Screw
Number of Elements
1
Operating Frequency
2.5 GHz to 2.7 GHz
Output Power
7W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Width
10.29mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF6G27-45,112 Datasheet
Download the complete datasheet for NXP BLF6G27-45,112 to view detailed technical specifications.
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