N-channel RF MOSFET transistor designed for high-frequency applications, operating from 2.5 GHz to 2.7 GHz. Features a 65V drain-to-source voltage rating and a continuous drain current capability of 20A. Delivers 7W maximum output power with 18dB gain. Constructed with a 3-pin CDFM package, suitable for screw mounting, and operates across a wide temperature range of -65°C to 200°C. This RoHS compliant component is lead-free.
Frequency2.7GHz
Voltage Rating65V
Current Rating20A
MountingScrew
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Technical Specifications
NXP BLF6G27-45,112 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Resistance | 385mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.7GHz |
| Gain | 18dB |
| Gate to Source Voltage (Vgs) | 13V |
| Height | 4.62mm |
| Lead Free | Lead Free |
| Length | 20.45mm |
| Max Frequency | 2.7GHz |
| Min Frequency | 2.5GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 7W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 2.5 GHz to 2.7 GHz |
| Output Power | 7W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 10.29mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF6G27-45,112 Datasheet
Download the complete datasheet for NXP BLF6G27-45,112 to view detailed technical specifications.
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