RF MOSFET transistor, N-channel enhancement mode, single element configuration. Features 65V drain-source voltage and 18A continuous drain current. Operates from 2500MHz to 2700MHz with typical 17dB power gain and 75W output power. Housed in a 3-pin SOT-502A ceramic package with flat lead shape, suitable for screw mounting. Operating temperature range from -65°C to 200°C.
PackageSOT-502A
MountingScrew
Power75(Typ)W
Quick Jump:
Technical Specifications
NXP BLF6G27-75,112 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-502A
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
34.16(Max)
Package Width (mm)
9.91(Max)
Package Height (mm)
4.72(Max)
Seated Plane Height (mm)
4.72(Max)
Package Material
Ceramic
Mounting
Screw
Channel Type
N
Configuration
Single
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage
65V
Maximum Continuous Drain Current
18A
Minimum Frequency
2500MHz
Maximum Frequency
2700MHz
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Mode of Operation
1-Carrier N-CDMA
Typical Power Gain
17dB
Output Power
75(Typ)W
Compliance
Cage Code
H1R01
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BLF6G27-75,112 Datasheet
Download the complete datasheet for NXP BLF6G27-75,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.