
RF MOSFET transistor, N-channel, enhancement mode, single element. Features 65V drain-source voltage, 18A continuous drain current, and operates from 2500MHz to 2700MHz. Offers 17dB typical power gain and 75W typical output power for 1-carrier N-CDMA operation. Packaged in a 3-pin SOT-502B (SOT family) lead-frame SMT with ceramic material, suitable for surface mounting. Operating temperature range from -65°C to 200°C.
NXP BLF6G27LS-75 technical specifications.
Download the complete datasheet for NXP BLF6G27LS-75 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.