RF MOSFET transistor, N-channel, enhancement mode, single element. Features 65V drain-source voltage, 18A continuous drain current, and operates from 2500MHz to 2700MHz. Offers 17dB typical power gain and 75W typical output power for 1-carrier N-CDMA operation. Packaged in a 3-pin SOT-502B (SOT family) lead-frame SMT with ceramic material, suitable for surface mounting. Operating temperature range from -65°C to 200°C.
PackageSOT-502B
MountingSurface Mount
Power75(Typ)W
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Technical Specifications
NXP BLF6G27LS-75 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-502B
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
20.7(Max)
Package Width (mm)
9.91(Max)
Package Height (mm)
4.72(Max)
Seated Plane Height (mm)
4.72(Max)
Package Material
Ceramic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage
65V
Maximum Continuous Drain Current
18A
Minimum Frequency
2500MHz
Maximum Frequency
2700MHz
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Mode of Operation
1-Carrier N-CDMA
Typical Power Gain
17dB
Output Power
75(Typ)W
Compliance
Cage Code
H1R01
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BLF6G27LS-75 Datasheet
Download the complete datasheet for NXP BLF6G27LS-75 to view detailed technical specifications.
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