RF MOSFET N-Channel transistor, single, enhancement mode, operating from 2500 MHz to 2700 MHz. Features a maximum drain-source voltage of 65V and a maximum continuous drain current of 18A. Delivers typical output power of 75W with 17dB power gain. Packaged in a 3-pin SOT-502B lead-frame SMT ceramic housing for surface mounting, with dimensions up to 20.7mm (L) x 9.91mm (W) x 4.72mm (H). Operates across a temperature range of -65°C to 200°C, supporting 1-Carrier N-CDMA mode.
NXP BLF6G27LS-75,118 technical specifications.
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