N-channel RF MOSFET transistor designed for high-power applications. Features a 104V drain-to-source breakdown voltage and a low 240mΩ drain-to-source resistance. Operates efficiently at frequencies up to 860MHz with a 21dB gain and 150W output power. Supports a continuous drain current of 19A and operates across a wide temperature range from -65°C to 150°C. This lead-free, RoHS-compliant component is suitable for screw mounting.
Frequency860MHz
MountingScrew
PolarityN-CHANNEL
Power150W
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Technical Specifications
NXP BLF884P,112 technical specifications.
General
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 104V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 104V |
| Frequency | 860MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Max Frequency | 860MHz |
| Min Frequency | 470MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 150W |
| Package Quantity | 60 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 42V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF884P,112 Datasheet
Download the complete datasheet for NXP BLF884P,112 to view detailed technical specifications.
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