N-channel RF MOSFET transistor designed for high-power applications. Features a 104V drain-to-source breakdown voltage and a low 240mΩ drain-to-source resistance. Operates efficiently at frequencies up to 860MHz with a 21dB gain and 150W output power. Supports a continuous drain current of 19A and operates across a wide temperature range from -65°C to 150°C. This lead-free, RoHS-compliant component is suitable for screw mounting.
Frequency860MHz
MountingScrew
PolarityN-CHANNEL
Power150W
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Technical Specifications
NXP BLF884P,112 technical specifications.
General
Continuous Drain Current (ID)
19A
Drain to Source Breakdown Voltage
104V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
104V
Frequency
860MHz
Gain
21dB
Gate to Source Voltage (Vgs)
11V
Lead Free
Lead Free
Max Frequency
860MHz
Min Frequency
470MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Mount
Screw
Number of Elements
2
Output Power
150W
Package Quantity
60
Packaging
Tray
Polarity
N-CHANNEL
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
42V
Compliance
RoHS
Compliant
Datasheet
NXP BLF884P,112 Datasheet
Download the complete datasheet for NXP BLF884P,112 to view detailed technical specifications.
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