BLF8G27LS100GVQ

RF MOSFET Transistors Power LDMOS transistor

Frequency2500 MHz to 2700 MHz

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NXP BLF8G27LS100GVQ technical specifications.

Continuous Drain Current (ID)

900mA

Drain to Source Resistance

100mR

Drain to Source Voltage (Vdss)

65V

Gain

17dB

Gate to Source Voltage (Vgs)

13V

Max Operating Temperature

225°C

Operating Frequency

2500 MHz to 2700 MHz

Package Quantity

Packaging

Rail/Tube

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.