RF Transistor, N-CHANNEL. Delivers 250W output power at 1.4GHz with 12dB gain. Features 75V drain-to-source breakdown voltage and 45A continuous drain current. Operates across a wide temperature range from -65°C to 200°C, with 60mΩ drain-to-source resistance. Designed for screw mounting, this RoHS compliant component offers 400W power dissipation.
NXP BLL1214-250,112 technical specifications.
| Continuous Drain Current (ID) | 45A |
| Current Rating | 45A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 75V |
| Frequency | 1.4GHz |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | 22V |
| Height | 4.72mm |
| Length | 34.16mm |
| Max Frequency | 1.4GHz |
| Min Frequency | 1.2GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 250W |
| Max Power Dissipation | 400W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 250W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| RoHS Compliant | Yes |
| Test Voltage | 36V |
| Voltage Rating | 75V |
| Width | 9.91mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BLL1214-250,112 to view detailed technical specifications.
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