N-channel MOSFET transistor featuring a 75V drain-to-source breakdown voltage and 10A continuous drain current. Offers 300mΩ drain-to-source resistance and 35W output power, with a maximum power dissipation of 110W. Operates across a wide temperature range from -65°C to 200°C, suitable for high-frequency applications up to 1.4GHz. This lead-free, RoHS compliant component is designed for screw mounting and comes in a 3-pin LDMOST package.
Frequency1.4GHz
Voltage Rating75V
Current Rating10uA
MountingScrew
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Technical Specifications
NXP BLL1214-35,112 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10uA |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 75V |
| DS Breakdown Voltage-Min | 36V |
| Frequency | 1.4GHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 4.67mm |
| Lead Free | Lead Free |
| Length | 20.45mm |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 110W |
| Mount | Screw |
| Output Power | 35W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| RoHS Compliant | Yes |
| Test Voltage | 36V |
| Voltage Rating | 75V |
| Width | 5.97mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLL1214-35,112 Datasheet
Download the complete datasheet for NXP BLL1214-35,112 to view detailed technical specifications.
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