NXP
BLL6H1214-500
NXP BLL6H1214-500 RF FET Transistor, 100 V, 45 A, 500 W, 1.03 GHz, 1.09 GHz, SOT-539A
PolarityN-CHANNEL
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Technical Specifications
NXP BLL6H1214-500 technical specifications.
General
Continuous Drain Current (ID)
72A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
13V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500W
Packaging
Bulk
Polarity
N-CHANNEL
Reach SVHC Compliant
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
NXP BLL6H1214-500 Datasheet
Download the complete datasheet for NXP BLL6H1214-500 to view detailed technical specifications.
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