RF Transistor, NPN, single configuration, silicon material, designed for high-power RF applications. Features a maximum collector-emitter voltage of 75V and a maximum power dissipation of 200W. Offers a minimum DC current gain of 40 at 2A/5V and a minimum output power of 65W with a typical power gain of 7dB. Housed in a 3-pin CDFM ceramic package with screw mounting, suitable for operation across a wide temperature range from -65°C to 200°C.
PackageCDFM
MountingScrew
Power65(Min)W
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Technical Specifications
NXP BLS3135-65,114 technical specifications.
General
| Package Family Name | CDFM |
| Package/Case | CDFM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 22.99(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 5.72(Max) |
| Seated Plane Height (mm) | 5.72(Max) |
| Package Material | Ceramic |
| Mounting | Screw |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 75V |
| Maximum Collector Base Voltage | 75V |
| Maximum Emitter Base Voltage | 2V |
| Maximum Power Dissipation | 200000mW |
| Minimum DC Current Gain | 40@2A@5V |
| Minimum DC Current Gain Range | 30 to 50 |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Output Power | 65(Min)W |
| Typical Power Gain | 7(Min)dB |
Compliance
| Cage Code | H1R01 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
NXP BLS3135-65,114 Datasheet
Download the complete datasheet for NXP BLS3135-65,114 to view detailed technical specifications.
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