High-power RF transistor designed for 2.7GHz to 3.1GHz operation, delivering 120W output power with 13.5dB gain. Features a 60V drain-to-source breakdown voltage and 33A continuous drain current. Offers a low 135mΩ drain-to-source resistance and a fast 6ns fall time. Operates across a wide temperature range from -65°C to 225°C, with N-channel polarity and screw mounting. This RoHS compliant component is supplied in rail/tube packaging.
Frequency3.1GHz
Voltage Rating60V
Current Rating33A
MountingScrew
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Technical Specifications
NXP BLS6G2731-120,112 technical specifications.
General
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 6ns |
| Frequency | 3.1GHz |
| Gain | 13.5dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 3.1GHz |
| Min Frequency | 2.7GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 120W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 120W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 32V |
| Voltage Rating | 60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLS6G2731-120,112 Datasheet
Download the complete datasheet for NXP BLS6G2731-120,112 to view detailed technical specifications.
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