N-Channel RF MOSFET with 60V Drain to Source Breakdown Voltage and 8.2A Continuous Drain Current. Features a maximum operating frequency of 3.5GHz and a minimum of 2.7GHz, delivering 30W output power with 13dB gain. Operates across a temperature range of -65°C to 150°C, with a 580mΩ drain-to-source resistance. This lead-free, RoHS compliant component is designed for screw mounting and comes in tray packaging.
Frequency1.49GHz
Voltage Rating100V
Current Rating45A
MountingScrew
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Technical Specifications
NXP BLS6G2735L-30,112 technical specifications.
General
| Continuous Drain Current (ID) | 8.2A |
| Current Rating | 45A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 580mR |
| Drain to Source Voltage (Vdss) | 60V |
| DS Breakdown Voltage-Min | 32V |
| Fall Time | 10ns |
| Frequency | 1.49GHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 3.5GHz |
| Min Frequency | 2.7GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 30W |
| Package Quantity | 60 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 100V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLS6G2735L-30,112 Datasheet
Download the complete datasheet for NXP BLS6G2735L-30,112 to view detailed technical specifications.
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