The BLS6G2735LS-30,112 is a high-power N-CHANNEL MOSFET from NXP, rated for 60V and 8.2A continuous drain current. It can handle up to 30W of output power and operates within a maximum temperature of 150°C. The device is packaged in bulk and is compliant with RoHS regulations. It features a drain to source breakdown voltage of 60V and a drain to source resistance of 580mR.
Frequency1.49GHz
Voltage Rating100V
Current Rating45A
PolarityN-CHANNEL
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Technical Specifications
NXP BLS6G2735LS-30,112 technical specifications.
General
| Continuous Drain Current (ID) | 8.2A |
| Current Rating | 45A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 580mR |
| Drain to Source Voltage (Vdss) | 60V |
| DS Breakdown Voltage-Min | 60V |
| Frequency | 1.49GHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Output Power | 30W |
| Package Quantity | 60 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 100V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLS6G2735LS-30,112 Datasheet
Download the complete datasheet for NXP BLS6G2735LS-30,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.