N-channel RF transistor operating up to 3.5GHz, delivering 20W maximum output power. Features a 60V drain-to-source breakdown voltage and 2.1A continuous drain current. Boasts a typical gain of 15.5dB and a fast 10ns fall time. Designed for high-temperature operation from -65°C to 225°C, this component is lead-free and RoHS compliant.
Frequency3.5GHz
Voltage Rating60V
Current Rating2.1A
MountingScrew
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Technical Specifications
NXP BLS6G3135-20,112 technical specifications.
General
| Continuous Drain Current (ID) | 2.1A |
| Current Rating | 2.1A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 580mR |
| Drain to Source Voltage (Vdss) | 60V |
| DS Breakdown Voltage-Min | 60V |
| Fall Time | 10ns |
| Frequency | 3.5GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 3.5GHz |
| Min Frequency | 3.1GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 32V |
| Voltage Rating | 60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLS6G3135-20,112 Datasheet
Download the complete datasheet for NXP BLS6G3135-20,112 to view detailed technical specifications.
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