N-channel LDMOS transistor designed for S-band radar applications, operating from 3.1GHz to 3.5GHz. Features a maximum output power of 20W, continuous drain current of 2.1A, and a drain-to-source breakdown voltage of 60V. This surface-mount device offers a typical gain of 15.5dB and a fall time of 10ns, with an extended operating temperature range from -65°C to 225°C. RoHS compliant and lead-free.
Frequency3.5GHz
Voltage Rating60V
Current Rating2.1A
MountingSurface Mount
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Technical Specifications
NXP BLS6G3135S-20,112 technical specifications.
General
| Continuous Drain Current (ID) | 2.1A |
| Current Rating | 2.1A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| DS Breakdown Voltage-Min | 60V |
| Fall Time | 10ns |
| Frequency | 3.5GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 3.5GHz |
| Min Frequency | 3.1GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 20 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 32V |
| Voltage Rating | 60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLS6G3135S-20,112 Datasheet
Download the complete datasheet for NXP BLS6G3135S-20,112 to view detailed technical specifications.
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